@2006”NˆÈ‘O‚̍‘Û‰ï‹c‚Å‚Ì”­•\

    -2006-

  1. T. Hashimoto, R. Oshima, H. Shigekawa, and Y. Okada, "MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers", 14th International Conference on Molecular Beam Epitaxy, Waseda (September 2006).
  2. Y. Shimizu, N. Miyashita, Y. Mura, A. Uedono, and Y. Okada, "Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE", 14th International Conference on Molecular Beam Epitaxy, Waseda (September 2006).
  3. R. Oshima, K. Akahane, M. Tsuchiya, H. Shigekawa, and Y. Okada, "Optical properties of stacked InAs self-organized quantum dots on InP (311)B", 14th International Conference on Molecular Beam Epitaxy, Waseda (September 2006).
  4. R. Oshima, T. Hashimoto, H. Shigekawa, and Y. Okada, "InAs self-assembled quantum dots superlattice structure fabricated by strain compensation technique", 28th International Conference on Physics of Semiconductors, Vienna (July 2006).
  5. N. Miyashita, Y. Shimizu, N. Kobayashi, M. Yamaguchi, and Y. Okada, "Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells", 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Hawaii (May 2006).
  6. Y. Shimizu, N. Miyashita, Y. Mura, A. Uedono, and Y. Okada, "Optimization of Growth of GaInNAs Dilute Nitrides for Multi-junction Solar Cell Applications", 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Hawaii (May 2006).
  7. R. Oshima, H. Komiyama, T. Hashimoto, H. Shigekawa, and Y. Okada, "Fabrication of Multi-layer Self-assembled InAs Quantum Dots for High-Efficiency Solar Cells", 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Hawaii (May 2006).
  8. Y. Okada, N. Kobayashi, and N. Sasaki, "Improvement of Below-Bandgap Photoabsorption in GaAs Solar Cells Using GaAs/GaNAs/InGaAs Quantum Wells", 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Hawaii (May 2006).
  9. -2005-

  10. N. Kobayashi, N. Sasaki, and Y. Okada, "Potentially Modulated GaAs/GaNAs/InGaAs Quantum Wells for Solar Cell Applications", 2005 MRS Fall Meeting, Boston (Nov. 2005).
  11. Y. Shimizu, N. Miyashita, A. Uedono, and Y. Okada, "Optimization of Growth Temperature of Ga(In)NAs Thin Films Grown by Atomic Hydrogen-assisted RF-MBE", 2005 MRS Fall Meeting, Boston (Nov. 2005).
  12. R. Oshima, T. Hashimoto, H. Shigekawa and Y. Okada, "Effect of Strain Compensation on Multi-stacking of InAs Self-assembled Quantum Dots Embedded in GaNAs Layers", 2005 MRS Fall Meeting, Boston (Nov. 2005).
  13. N. Kobayashi, N. Miyashita, Y. Shimizu, and Y. Okada, "Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structure", 2005 International Conference on Solid State Devices and Materials (ssdm), Kobe (Sept. 2005).
  14. R. Oshima, T. Hashimoto, H. Shigekawa and Y. Okada, "Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain compensating layers", 12th International Conference on Modulated Semiconductor Structures (MSS-12), Albuquerque (July 2005).
  15. R. Oshima, T. Hashimoto, H. Shigekawa and Y. Okada, "1.3um Emission from InAs Self-assembled Quantum Dots embedded in GaNAs Strain-compensating Layers", International Symposium on Quantum Dots and Photonic Crystals 2005, Tokyo (March 2005).
  16. Y. Okada, and N. Shiotsuka, "Fabrication of Potentially Modulated Multi-Quantum Well Solar Cells", 31st IEEE Photovoltaic Specialists Conference, Walt Disney Resort (Jan. 2005).
  17. -2004-

  18. Y. Okada, Y. Shimizu, N. Kobayashi, and A. Uedono, "Effect of atomic hydrogen on the growth of GaInNAs thin films by RF-MBE", 2004 International Conference on Molecular Beam Epitaxy, Edinburgh (Aug. 2004).
  19. R. Oshima, K. Uehara, H. Shigekawa, and Y. Okada, "Fabrication of self-organized GaInNAs quantum dots on GaAs (311)B by atomic hydrogen-assisted RF- molecular beam epitaxy", 2004 International Conference on Compound Semiconductors, Seoul (Sept. 2004).
  20. Y. Shimizu, N. Kobayashi, A. Uedono, and Y. Okada, "Defect control in Ga(In)NAs films grown by atomic H assisted RF-MBE", 2004 International Conference on Compound Semiconductors, Seoul (Sept. 2004).
  21. -2003-

  22. Y. Okada, R. Oshima, and H. Shigekawa, "Electronic States of Self-Organized InGaAs Quantum Dots Studied by Conductive Scanning Probe Microscope", 1st International Tsukuba-Symposium on "Nanoscience" (ITNs 2003), Tsukuba (Nov. 2003).
  23. R. Oshima and Y. Okada, "Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy", 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara (Nov. 2003).
  24. R. Oshima, N. Kurihara, H. Shigekawa, and Y. Okada, "Electronic States of Self-Organized InGaAs Quantum Dots on GaAs (311)B Studied by Conductive Probe Microscope", 11th International Conference on Modulated Semiconductor Structures (MSS-11), Nara (July 2003).
  25. H. Z. Song, Y. Nakata, Y. Okada, T. Miyazawa, T. Ohshima, M. Takatsu, M. Kawabe, and N. Yokoyama, "Growth Process of Quantum Dots Precisely Controlled by an AFM Assisted Technique", 11th International Conference on Modulated Semiconductor Structures (MSS-11), Nara (July 2003).
  26. H. Z. Song, Y. Nakata, Y. Okada, T. Miyazawa, T. Ohshima, M. Kawabe, and N. Yokoyama, "Quantum Dot Fabrication for Quantum Computing: An AFM-Assisted Technique", International Symposium on Nanotechnology for Photonics and Optoelectronics (NPO-2003), Tokyo (March 2003).
  27. N. Shiotsuka, T. Takeda, and Y. Okada, "Potentially Modulated Multi-Quantum Wells with Improved dark Current Characteristics", 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  28. Y. Shimizu and Y. Okada, "GaAs/Si Solar Cells with Internal Bragg Reflector Superlattice Structure", 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  29. Y. Okada, N. Matsumoto, and A. Ohmae, "GaInNAs for Multi-Junction Tandem Solar cells", 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  30. -2002-

  31. Y. Okada and R. Oshima, gStacked Quamtum Dots for Use in Higher Efficiency Photovoltaic Devicesh, MRS 2002 Fall Meeting, Boston, Dec. 2002.
  32. (Invited) Y. Okada, K. Akahane, and M. Kawabe, gHigh-density self-organized quantum dots with improved size uniformity for optical device applicationsh, SPIE Photonics-Asia 2002, Shanghai, Oct. 2002.
  33. A. Ohmae, N. Matsumoto, and Y. Okada, gGrowth of GaInNAs by Atomic Hydrogen-Assisted RF-MBEh, 12th International Conference on Molecular Beam Epitaxy, San Francisco, Sept. 2002.
  34. A. Ohmae, N. Matsumoto, K. Kawabe, and Y. Okada, gEffects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF-MBEh, 2002 International Workshop on Nitride Semiconductors, Aachen, July 2002.
  35. H. Z. Song, T. Ohshima, Y. Okada, K. Akahane, T. Miyazawa, M. Kawabe, and N. Yokoyama, gFinely Controlling Quantum Dots on GaAs Surface Patterned by Removing Oxide Dots Formed in Atomic Force Microscope Lithographyh, 26th International Conference on the Physics of Semiconductors, Edinburgh, July 2002.
  36. R. Oshima, K. Akahane, M. Kawabe, and Y. Okada, gTemperature dependence of photoluminescence from long-wavelength InGaAs quantum dots on GaAs (311)B substrate grown with strain-reducing layersh, 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, Sept. 2002.
  37. K. Akahane, N. Yamamoto, N. Ohtani, Y. Okada, and M. Kawabe, gRole of Al in strain-compensating spacer layer of stacked InAs quantum dot structures on InP (311)h, 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, Sept. 2002.
  38. H. Z. Song, T. Ohshima, Y. Okada, K. Akahane, M. Kawabe, T. Miyazawa, and N. Yokoyama, gAFM-assisted control of self-assembled quantum dotsh, 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, Sept. 2002.
  39. Y. Okada, T. Takeda, and M. Kawabe, gControl of Dark Currents in Multi-Quantum Well Solar Cells By Use of Thin Tunnel Barriersh, 29th IEEE Photovoltaic Specialists Conference, New Orleans, May 2002.
  40. -2001-

  41. Y. Okada, M. Miyagi, H. Shigekawa, and M. Kawabe, gElectronic properties of self-organized InGaAs quantum dots on GaAs(311)B substrates studied by conductive AFMh, International Colloquium on Scanning Probe Microscopy, Atagawa, Dec. 2001.
  42. H. Z. Song, Y. Okada, K. Akahane, H. Z. Xu, and M. Kawabe, gNegative differential conductance of InxGa1-xAs/GaAs(311)B laterally coupled quantum dotsh, 28th International Symposium on Compound Semiconductors, Tokyo, Oct. 2001.
  43. M. Miyagi, K. Akahane, H. Shigekawa, M. Kawabe, and Y. Okada, gTransport through InGaAs/GaAs(311)B Quantum Dots Studied by Conductive Scanning Probesh, 28th International Symposium on Compound Semiconductors, Tokyo, Oct. 2001.
  44. J. Takamori, Y. Shimizu, T. Ueda, C. Yamagishi, M. Kawabe, and Y. Okada, gOptimization of GaAs/Si Heteroepitaxy for Solar Cell Applicationh, 28th International Symposium on Compound Semiconductors, Tokyo, Oct. 2001.
  45. K. Akahane, H. Z. Xu, H. Z. Song, Y. Okada, and M. Kawabe, gUniform stacked InAs quantum dots by strain control on InP (311)B substrateh, 1st International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, July 2001.
  46. Y. Okada, S. Seki, T. Takeda, and M. Kawabe, gControl of Dark Currents in Multi-Quantum Well Solar Cells Fabricated by Atomic H-Assisted Molecular Beam Epitaxyh, 13th International Conference on Crystal Growth, Kyoto, July 2001.
  47. -2000-

  48. K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gInGaAs Quantum Dots Embedded in p-n Junction on GaAs (311)B substrateh, MRS 2000 Fall Meeting, Boston, Nov. 2000.
  49. Y. Okada, K. Akahane, Y. Iuchi, and M. Kawabe, gProbing the Properties of Self-Organized InGaAs Quantum Dots on GaAs (311)B by Conductive Atomic Force Microscope Tiph, MRS 2000 Fall Meeting, Boston, Nov. 2000.
  50. Y. Okada, K. Akahane, Y. Iuchi, and M. Kawabe, gSelf-Organized InGaAs Quantum Dots Studied By Using Conductive SPM Tiph, 1st International Symposium on Nanoarchitectonics Using Suprainteractions, Tsukuba, Nov. 2000.
  51. K. Akahane, H. Z. Xu, Y. Okada, and M. Kawabe, gSize and Density Control of InGaAs Quantum Dotsh 1st International Symposium on Nanoarchitectonics Using Suprainteractions, Tsukuba, Nov. 2000.
  52. (Invited) Y. Okada, gAFM nano-oxidation of GaAs and application to nano-devicesh, Nanotechnology Forum V - Workshop on SPM oxidation, Tsukuba, Oct. 2000.
  53. K. Akahane, S. Lan, H. Z. Song, Y. Okada, T. Takamasu, G. Kido, and M. Kawabe, gThe Effects of Structure Ordering on Lateral Coupling of Quantum Dots Grown on GaAs (311)B Studied by Magnetoluminescenceh, 14th International Conference on High Magnetic Fields in Semiconductor Physics, Matsue, Sept. 2000.
  54. K. Akahane, T. Kawamura, S. Lan, Y. Okada, and M. Kawabe, gGrowth of InGaAs Quantum Dots on AlGaAs (311)B Surfaceh, 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, Sapporo, Sept. 2000.
  55. Y. Okamoto, K. Takahashi, Y. Okada, and M. Kawabe, gThe Effect of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxyh, International Workshop on Nitride Semiconductors, Nagoya, Sept. 2000.
  56. Y. Okada, S. Seki, Y. Hagiwara, and M. Kawabe, gImproved Dark Current Characteristics of GaAs/InGaAs Multi-Quantum Well Solar Cells Fabricated by Atomic H-Assisted Molecular Beam Epitaxyh, 28th IEEE Photovoltaic Specialists Conference, Anchorage, Sept. 2000.
  57. Y. Okamoto, K. Takahashi, H. Nakamura, Y. Okada, and M. Kawabe, gThe Effects of Atomic Hydrogen on In Incorporation and Ordering in InGaN grown by RF-MBEh, 3rd International Symp. on Blue Laser and Light Emitting Diodes, Berlin, March 2000.
  58. -1999-

  59. K. Y. Jang, Y. Okada, and M. Kawabe, gEffect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxyh, International Symposium on Surface Science for Micro- and Nano-Device Fabrication, Tokyo, Nov. 1999.
  60. Y. Okada, Y. Iuchi, and M. Kawabe, gGaAs Oxide Patterns Generated by SPM Tip-Induced Nano-Oxidation Technique Using Modulated Tip Biash, 26th International Symposium on Compound Semiconductors, Berlin, Aug. 1999.
  61. Y. Okada, Y. Suzuki, T. Kikuchi and M. Kawabe, gUse of Multi-Quantum Wells for Photoabsorption Enhancement in Compound Semiconductor Solar Cellsh, 1999 Electronic Materials Conference, Santa Barbara, June 1999.
  62. K. Y. Jang, Y. Okada, and M. Kawabe, gEffects of hydrogen in AlAs growth by atomic hydrogen-assisted molecular beam epitaxyh, MRS 1999 Spring Meeting, San Francisco, April 1999.
  63. -1998-

  64. Y. Okada, Y. Iuchi, M. Kawabe, and J. S. Harris, Jr., gGaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Techniqueh, 25th International Symposium on Compound Semiconductors, Nara, Oct. 1998.
  65. Y. Okamoto, S. Hashiguchi, Y. Okada, and M. Kawabe, gEffects of Atomic Hydrogen on the Growth of GaN grown by RF-MBEh, 2nd International Symp. on Blue Laser and Light Emitting Diodes, Kisarazu, Sept. 1998.
  66. Y. Okada, Y. Suzuki, M. Kawabe, N. Yui, and H. Kawanami, gPhotovoltaic Properties of GaAs/InGaAs-Based Quantum Well Structures Fabricated by Molecular Beam Epitaxy with Atomic Hydrogenh, 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, July 1998.
  67. S. Lan, K. Akahane, K. Y. Jang, T. Kawamura, Y. Okada, and M. Kawabe, gTemperature and Excitation Dependence of Photoluminescence from In0.4Ga0.6As Quantum Dots on GaAs (001) Substrates with Large Surface Coverageh, 10th International Conference on InP and Related Materials, Tsukuba, May 1998.
  68. (Invited) Y. Okada and J. S. Harris, Jr., gCurrent Control in 2DEG Channel Using Scanning Probe Microscope Nano-Oxidation Techniqueh, MRS 1998 Spring Meeting, San Francisco, April 1998.
  69. K. Akahane, T. Kawamura, S. Lan, Y. Okada, and M. Kawabe, gControl of Size and Density of Self-organized Quantum Dots Grown on GaAs (311)B by Atomic H-assisted Molecular Beam Epitaxyh, 3rd International Symposium on Advanced Physical Fields, Tsukuba, Feb. 1998.
  70. Y. Okada, S. Amano, and M. Kawabe, gOn the Mechanism of SPM Tip-Induced Nano-Oxidation Process of GaAsh, 3rd International Symposium on Advanced Physical Fields, Tsukuba, Feb. 1998.
  71. -1997-

  72. (Invited) Y. Okada, gHigh-Quality GaAs-on-Si Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Photoelectronicsh, International Topical Meeting on Photoelectronics, Beijing, Oct. 1997.
  73. K. Akahane, K. Okino, Y. Okada, and M. Kawabe, gSelf-organized quantum dots grown on GaAs (311)B by atomic hydrogen-assisted molecular beam epitaxyh, International Workshop on Nano-Physics and Electronics, Tokyo, Sept. 1997.
  74. K. Y. Jang, Y. Okada, and M. Kawabe, gBand-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxyh, International Workshop on Nano-Physics and Electronics, Tokyo, Sept. 1997.
  75. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo, and J. S. Harris, Jr., gAtomic Force Microscope Nanoscale Lithography For Single-Electron Device Applicationsh, 24th International Symposium on Compound Semiconductors, San Diego, Sept. 1997.
  76. -1996-

  77. Y. Okada, J. S. Harris, Jr., A. Sutoh, and M. Kawabe, gGrowth of Abrupt GaAs/Ge Interfaces by Atomic Hydrogen-Assisted MBEh, 9th International Conference on Molecular Beam Epitaxy, Malibu, Aug. 1996.
  78. Y. Okada, J. S. Harris, Jr., and W. Gotz, gDeep Level Defects in GaAs/Si Grown by Low Temperature Atomic H-assisted MBEh, 1996 Electronic Materials Conference, Santa Barbara, June 1996.
  79. B. N. Shimbo, J. S. Harris, Jr., Y. Okada, S. Komarov, and B. J. Vartanian, gAtomic Force Microscope Chemically Induced Direct Processing of GaAs and NiAlh, MRS 1996 Spring Meeting, San Francisco, April 1996.
  80. -1995-

  81. Y. J. Chun, S. Nakajima, Y. Okada, and M. Kawabe, gUniform Quantum Dots by Self-Organizing Process in Atomic Hydrogen-Assisted MBEh, MRS 1995 Fall Meeting, Boston, Nov. 1995.
  82. Y. Okada, A. Sutoh, M. Kawabe, and J. S. Harris, gGaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxyh, MRS 1995 Fall Meeting, Boston, Nov. 1995.
  83. -1994-

  84. Y. Okada, A. Kawabata, M. Kawabe, N. Yui, and H. Kawanami, gGrowth of GaAs and AlGaAs on Si Substrates by Atomic Hydrogen-Assisted MBE (H-MBE) for Solar Cell Applicationsh, IEEE 1st World Conference on Photovoltaic Solar Energy Conversion, Hawaii, Dec. 1994.
  85. S. Ohta, Y. Okada, and M. Kawabe, gEffect of Atomic Hydrogen Irradiation in Low-Temperature GaAs/Si Heteroepitaxyh, 8th International Conference on Molecular Beam Epitaxy, Osaka, Aug. 1994.
  86. Y. J. Chun, Y. Okada, and M. Kawabe, gEffect of Atomic Hydrogen on Highly Lattice-Mismatched Epitaxyh, 8th International Conference on Molecular Beam Epitaxy, Osaka, Aug. 1994.
  87. -1993-

  88. Y. Okada, S. Ohta, H. Shimomura, H. Matsumoto, A. Kawabata, and M. Kawabe, gAtomic Hydrogen-Assisted GaAs/Si Heteroepitaxy for Solar Cell Applicationsh, 7th International Photovoltaic Science and Engineering Conference, Nagoya, Nov. 1993.
  89. T. Sugaya, M. Kaneko, Y. Okada, and M. Kawabe, gOptical Properties of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxyh, International Symp. on Nanostructures & Quantum Effects, Tsukuba, Nov. 1993.
  90. Y. Okada, S. Ohta, and M. Kawabe, gPhotoluminescence from GaAs/AlGaAs Quantum Wells Grown by Low-Temperature MBE with Atomic Hydrogen Irradiationh, 1993 International Conference on Solid State Devices & Materials, Makuhari, Aug. 1993.
  91. Y. Okada, H. Shimomura, and M. Kawabe, gAtomic Hydrogen-Assisted Molecular Beam Epitaxy of GaAs on Sih, 1993 Electronic Materials Conference, Santa Barbara, June 1993.
  92. -1992-

  93. T. Sugaya, Y. Okada, and M. Kawabe, gSelective Area Growth of GaAs by Molecular Beam Epitaxyh, 19th International Symposium on GaAs & Related Compounds, Karuizawa, Sept. 1992.
  94. Y. Okada, H. Shimomura, H. Matsumoto, S. Ohta, A. Kawabata, and M. Kawabe, gElectrical Properties of Epitaxial GaAs Grown by Low-Temperature MBE with Atomic Hydrogen Irradiationh, 19th International Symposium on GaAs & Related Compounds, Karuizawa, Sept. 1992.
  95. H. Shimomura, Y. Okada, and M. Kawabe, gReduction of Dislocation Density of GaAs on Si(100) by Low-Temperature Growth and Atomic Hydrogen Irradiationh, 1992 International Conference on Solid State Devices & Materials, Tsukuba, Aug. 1992.
  96. Y. Okada, H. Shimomura, T. Sugaya, and M. Kawabe, gSurface Cleaning of Si (100) by Atomic Hydrogen Irradiation and Its Structure Studied by Scanning Tunneling Microscopeh, International Workshop on Science and Technology for Surface Reaction Process, Tokyo, Jan. 1992.
  97. -1991-

  98. T. Sugaya, Y. Okada, and M. Kawabe, gInvestigation of Growth Mechanism of GaAs by Molecular Beam Epitaxy with Atomic Hydrogen Irradiationh, 1st International Symposium on Atomically Controlled Surfaces & Interfaces, Tokyo, Nov. 1991.
  99. T. Ishibashi, Y. Okada, S. Yokoyama, and M. Kawabe, gLayer-by-Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxyh, 1991 International Conf. on Solid State Devices & Materials, Yokohama, Aug. 1991.
  100. T. Sugaya, H. Shimomura, Y. Okada, and M. Kawabe, gSelective Growth of GaAs by Molecular Beam Epitaxy with Atomic Hydrogen Irradiationh, 1991 International Conf. on Solid State Devices & Materials, Yokohama, Aug. 1991.
  101. Y. Okada, H. Ajisawa, A. Moki, T. Sugaya, and M. Kawabe, gLow Temperature Surface Preparation of Vicinal Si (100) for Epitaxial Growth of GaAs on Sih, 1991 International Conf. on Solid State Devices & Materials, Yokohama, Aug. 1991.
  102. -1990-

  103. (Invited) K. Tada, Y. Nakano, T. Ishikawa, Y. Okada, and Y. C. Chan, gPrecise Control of the MBE System and its Application to Thin Film Photonic Devicesh, C-MRS International 1990 Symposium, Beijing, June 1990.
  104. Y. Okada and K. Tada, gGaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structureh, 1990 International Topical Meeting on Photonic Switching, Kobe, April 1990.
  105. -1989-

  106. (Invited) K. Tada, Y. Okada, and T. Ishikawa, Semiconductor Optical Modulator/Switch with Heterojunction Bipolar Transistor Waveguide Structure, 2nd Regional Symposium on Optoelectronics, Jakarta, Dec. 1989.
  107. Y. Okada, T. Ishikawa, Y. Nakano, and K. Tada, gGaAs/AlGaAs Double-Graded Heterojunction Bipolar Transistor Prepared by MBE with Precise Temperature Control Using Modern Control Theoryh, 1st International Meeting on Advanced Processing and Characterization Technologies, Tokyo, Oct. 1989.
  108. Y. Okada, R. J. Simes, L. A. Coldren, J. L. Merz, and K. Tada, GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulatorh, 21st Conference on Solid State Devices & Materials, Tokyo, Aug. 1989.
  109. -1988-

  110. Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, and K. Tada, gThe Effect of Band-Tailing on the Performance of GaAs/AlGaAs Optical Modulators Operated by Free Carrier Injectionh, 1st IEEE/LEOS Annual Meeting, Santa Clara, Nov. 1988.
  111. -1986-

  112. K. Tada and Y. Okada, gProposal of Bipolar Transistor Carrier-Injected Optical Modulators and Switchesh, 18th (International) Conference on Solid State Devices & Materials, Tokyo, Aug. 1986.