@2006”N“xˆÈ‘O‚ÌŠw‰ï˜_•¶Ž
 

    -2006-

  1. Y. Shimizu N. Miyashita, and Y. Okada, "Optimization of Ga(In)NAs thin film growth by atomic H-assisted molecular beam epitaxy", MRS Symposium Proceedings 891, EE10-32 (2006).
  2. Y. Shimizu, Y. Mura, A. Uedono, and Y. Okada, "Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy", Journal of Applied Physics 100, 064910 (2006)pdficon_small.gif(361 byte).
  3. R. Oshima, T. Hashimoto, H. Shigekawa, and Y. Okada, "Strain compensation effect on stacked InAs self-assembled quantum dots embedded in GaNAs layers", MRS Symposium Proceedings 891, EE03-01 (2006).
  4. R. Oshima, T. Hashimoto, H. Shigekawa, and Y. Okada, "Long wavelength InAs self- assembled quantum dots embedded in GaNAs strain-compensating layers", Physica E 32, pp. 77-80 (2006)pdficon_small.gif(361 byte).
  5. R. Oshima, T. Hashimoto, H. Shigekawa, and Y. Okada, "Multiple stacking of self-assembled quantum dots embedded by GaNAs strain compensating layers", Journal of Applied Physics 100, 083110 (2006)pdficon_small.gif(361 byte).
  6. -2005-

  7. Y. Okada, N. Shiotsuka, and T. Takeda, "Potentially modulated multi-quantum wells for solar cell applications", Solar Energy Materials & Solar Cells, 85, pp. 143-152 (2005)pdficon_small.gif(361 byte).
  8. Y. Okada, and N. Shiotsuka, "Fabrication of Potentially Modulated Multi-Quantum Well Solar Cells", Proc. of 31st IEEE Photovoltaic Specialists Conference, Walt Disney Resort (Jan. 2005).
  9. Y. Okada, N. Shiotsuka, H. komiyama, K. Akahane and N. Ohtani, "Multi-Stacking of Highly Uniform Self-Organized Quantum Dots for Solar Cell Applications". Proc. of 20th European Photovoltaic Solar Energy Conference and Exhibition(EUPVSEC), Barcelona (June 2005).
  10. Y. Shimizu, N. Kobayashi, A. Uedono, and Y. Okada, "Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE", Journal of Crystal Growth, 278, pp. 553-557 (2005)pdficon_small.gif(361 byte) .
  11. -2004-

  12. Y. Shimizu and Y. Okada, "Growth of high-quality GaAs/Si films for use in solar cell applications", Journal of Crystal Growth, 265, pp. 99-106 (2004)
  13. N. Shiotsuka, T. Takeda, and Y. Okada, "Optical properties of potentially modulated multi-quantum well solar cell structures", Journal of Crystal Growth, 264, pp. 86-91 (2004).
  14. R. Oshima and Y. Okada, "Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy", Thin Solid Films, 464-465, pp. 229-232 (2004).
  15. H. Z. Song, Y. Nakata, Y. Okada, T. Miyazawa, T. Ohshima, M. Takatsu, M. Kawabe, and N. Yokoyama, "Growth process of quantum dots precisely controlled by an AFM assisted technique", Physica E, 21, pp. 625-630 (2004).
  16. R. Oshima, N. Kurihara, H. Shigekawa, and Y. Okada, "Electronic states of self-organized InGaAs quantum dots on GaAs (311)B studied by conductive probe microscope", Physica E, 21, pp. 414-418 (2004).
  17. R. Oshima, A. Ohmae, and Y. Okada, "Fabrication of self-organized GaInNAs quantum dots by atomic-H assisted RF-molecular beam epitaxy", Journal of Crystal Growth, 281, pp. 11-15 (2004).
  18. H. Z. Song, M. Kawabe, Y. Okada, R. Yoshizaki, T. Usuki, Y. Nakata, T. Ohshima, and N. Yokoyama, "Scanning tunneling microscope study of capped quantum dots", Applied Physics Letters, 85, 2355-2357 (2004).
  19. -2003-

  20. Y. Okada, N. Matsumoto, and A. Ohmae, "GaInNAs for Multi-Junction Tandem Solar cells", Proc. of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  21. Y. Shimizu and Y. Okada, "GaAs/Si Solar Cells with Internal Bragg Reflector Superlattice Structure", Proc. of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  22. N. Shiotsuka, T. Takeda, and Y. Okada, "Potentially Modulated Multi-Quantum Wells with Improved dark Current Characteristics", Proc. of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka (May 2003).
  23. A. Ohmae, N. Matsumoto, and Y. Okada, "Growth of GaInNAs by Atomic Hydrogen-assisted RF-MBE", Journal of Crystal Growth, 251, pp. 412-416 (2003).
  24. -2002-

  25. Y. Okada, S. Seki, T. Takeda, and M. Kawabe, gControl of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxyh, J. Crystal Growth, 237-239, 1515-1518 (2002).
  26. J. Takamori, Y. Shimizu, T. Ueda, C. Yamagishi, M. Kawabe, and Y. Okada, gOptimization of GaAs/Si Heteroepitaxy for Solar Cell Applicationh, Institute of Physics Conference Series, 170, 687-692 (2002).
  27. Y. Okada, T. Takeda, and M. Kawabe, gControl of Dark Currents in Multi-Quantum Well Solar Cells By Use of Thin Tunnel Barriersh, Proc. of 29th IEEE Photovoltaic Specialists Conference, New Orleans, May 2002.
  28. A. Ohmae, N. Matsumoto, M. Kawabe, and Y. Okada, "Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF-Molecular Beam Epitaxy", phys. stat. sol. (c), 0, pp. 175-178 (2002).
  29. A. Ohmae, N. Matsumoto, and Y. Okada, "Growth of GaInNAs by Atomic Hydrogen-assisted RF-MBE", 12th International Conference on Molecular Beam Epitaxy, San Francisco, Sept. 2002.
  30. A. Ohmae, N. Matsumoto, K. Kawabe, and Y. Okada, "Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF-MBE", 2002 International Workshop on Nitride Semiconductors, Aachen, July 2002.
  31. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gDistinctly different two-dimensional ordering alignments of InGaAs island arrays on GaAs (311)B and AlGaAs (311)B surfacesh, J. Crystal Growth, 234, 509-515 (2002).
  32. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gEffect of buffer layer composition on lateral alignment of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B substratesh, J. Crystal Growth, 237-239, 1307-1311 (2002).
  33. M. Miyagi, K. Akahane, H. Shigekawa, M. Kawabe, and Y. Okada, gTransport through InGaAs/GaAs(311)B Quantum Dots Studied by Conductive Scanning Probesh, Institute of Physics Conference Series, 170, 561-566 (2002).
  34. H. Z. Song, Y. Okada, K. Akahane, H. Z. Xu, and M. Kawabe, gNegative differential conductance of InxGa1-xAs/GaAs(311)B laterally coupled quantum dotsh, Institute of Physics Conference Series, 170, 381-386 (2002).
  35. Y. Okada, M. Miyagi, K. Akahane, M. Kawabe, and H. Shigekawa, gSelf-organized InGaAs quantum dots grown on GaAs (311)B substrate studied by conductive atomic force microscope techniqueh, J. Crystal Growth, 245, 212-218 (2002).
  36. Y. Okada, K. Akahane, and M. Kawabe, gHigh-density self-organized quantum dots with improved size uniformity for optical device applicationsh, Proc. of SPIE Photonics-Asia 2002, Shanghai, Oct. 2002.
  37. K. Akahane, N. Ohtani, Y. Okada, M. Kawabe, "Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP (311)B substrate", Journal of Crystal Growth, 245, pp. 31-36 (2002).
  38. H. Z. Song, T. Ohshima, Y. Okada, K. Akahane, T. Miyazawa, M. Kawabe, and N. Yokoyama, "Finely Controlling Quantum Dots on GaAs Surface Patterned by Removing Oxide Dots Formed in Atomic Force Microscope Lithography", 26th International Conference on the Physics of Semiconductors, Edinburgh (July 2002).
  39. H. Z. Song, T. Ohshima, Y. Okada, K. Akahane, M. Kawabe, T. Miyazawa, and N. Yokoyama, "AFM-assisted control of self-assembled quantum dots", 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba (Sept. 2002)
  40. K. Akahane, N. Yamamoto, N. Ohtani, Y. Okada, and M. Kawabe, "Role of Al in strain-compensating spacer layer of stacked InAs quantum dot structures on InP (311)", 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, (Sept. 2002)
  41. R. Oshima, K. Akahane, M. Kawabe, and Y. Okada, "Temperature dependence of photoluminescence from long-wavelength InGaAs quantum dots on GaAs (311)B substrate grown with strain-reducing layers", 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba (Sept. 2002).
  42. -2001-

  43. Y. Okada, K. Akahane, Y. Iuchi, and M. Kawabe, gProbing the Properties of Self-Organized InGaAs Quantum Dots on GaAs (311)B by Conductive Atomic Force Microscope Tiph, MRS Symp. Proc., 462, J4.7 (2001).
  44. K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gInGaAs Quantum Dots Embedded in p-n Junction on GaAs (311)B substrateh, MRS Symp. Proc., 462, J3.11 (2001).
  45. K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gInGaAs quantum dots on GaAs (311)B substrates confined in AlGaAs barrier layersh, J. Crystal Growth, 222, 53-57 (2001).
  46. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gStrikingly well-defined two-dimensional ordered arrays of In0.4Ga0.6As quantum dots grown on GaAs (311)B surfaceh, J. Crystal Growth, 223, 104-110 (2001).
  47. S. Lan, S. Nishikawa, O. Wada, K. Akahane, Y. Okada, and M. Kawabe, gDifferent responses of localized and extended excitons to exciton-exciton scattering manifested in excitation density-dependent photoluminescence excitation spectrah, J. Appl. Phys., 89 (11) 6171-6176 (2001).
  48. K. Akahane, T. Kawamura, S. Lan, Y. Okada, and M. Kawabe, gGrowth of InGaAs Quantum Dots on the AlGaAs (311)B Surfaceh, Jpn. J. Appl. Phys., 40 (3B), 1870-1873 (2001).
  49. K. Akahane, S. Lan, H. Z. Song, Y. Okada, M. Kawabe, T. Takamasu, and G. Kido, gThe effects of structure ordering on lateral coupling of quantum dots grown on GaAs (311)B studied by magnetoluminescenceh, Physica B, 298 (1-4), 267-271 (2001).
  50. H. Z. Song, Y. Okada, K. Akahane, S. Lan, H. Z. Xu, and M. Kawabe, gMetal-insulator transition in an In0.4Ga0.6As/GaAs (311)B quantum dot superlatticeh, Physics Lett. A, 284 (2-3), 130-135 (2001).
  51. H. Z. Song, K. Akahane, S. Lan, H. Z. Xu, Y. Okada, and M. Kawabe, gIn-plane photocurrent of self-assembled InxGa1-xAs/GaAs(311)B quantum dot arraysh, Physical Review B, 64 (8), 085303 (2001).
  52. Y. Okada, M. Miyagi, K. Akahane, Y. Iuchi, and M. Kawabe, gSelf-organized InGaAs quantum dots on GaAs (311)B studied by conductive atomic force microscope tiph, J. Appl. Phys., 90 (1), 192-196 (2001).
  53. H. Z. Xu and Y. Okada, gAnalytical calculation of the resonant quasi-level lifetime in double-barrier quantum structuresh, Physica B, 305, 113-120 (2001).
  54. K. Akahane, H. Z. Xu, Y. Okada, and M. Kawabe, gFormation of lateral two-dimensional ordering in self-assembled InGaAs quantum dots on high index substratesh, Physica E, 11, 94-98 (2001).
  55. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gTwo-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (311)B surfaceh, J. Crystal Growth, 223, 639-644 (2001).
  56. H. Z. Xu and Y. Okada, gDoes a magnetic barrier or a magnetic-electric barrier structure possess any spin polarization and spin filtering under zero bias?h, Appl. Phys. Lett., 79 (19), 3119-3121 (2001).
  57. H. Z. Xu, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gSpatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B surface by atomic hydrogen-assisted molecular beam epitaxyh, Appl. Surface Sci., 185, 92-98 (2001).
  58. Y. Okamoto, K. Takahashi, Y. Okada, and M. Kawabe, gThe Effects of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxyh, IPAP Conference Series, 1, 210-212 (2001).
  59. K. Takahashi, Y. Okada, and M. Kawabe, gFabrication of InGaN Multiple Quantum Wells Grown by Hydrogen Flux Modulation in RF Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 40 (5B), L502-L504 (2001).
  60. Y. Okada, S. Seki, Y. Hagiwara, and M. Kawabe, gImproved Dark Current Characteristics of GaAs/InGaAs Multi-Quantum Well Solar Cells Fabricated by Atomic H-Assisted Molecular Beam Epitaxyh, Proc. of 28th IEEE Photovoltaic Specialists Conference, Anchorage, Sept. 2000.
  61. K. Akahane, S. Lan, T. Kawamura, T. Takamasu, G. Kido, Y. Okada, and M. Kawabe, gMagnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs (311)Bh, Jpn. J. Appl. Phys., 39 (3A), 1100-1101 (2000).
  62. Y. Okada, Y. Iuchi, and M. Kawabe, gGaAs Oxide Patterns Generated by SPM Tip-Induced Nano-Oxidation Technique Using Modulated Tip-Biash, Institute of Physics Conference Series, 166, 211-214 (2000).
  63. Y. Okada, Y. Iuchi, and M. Kawabe, gScanning probe microscope tip-induced oxidation of GaAs using modulated tip biash, J. Appl. Phys., 87 (12), 8754-8758 (2000).
  64. Y. Okada, Y. Iuchi, M. Kawabe, and J. S. Harris, Jr., gBasic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation processh, J. Appl. Phys., 88 (2), 1136-1140 (2000).
  65. S. Lan, T. Nishimura, K. Akahane, H. Z. Song, S. Nishikawa, Y. Okada, O. Wada, and M. Kawabe, gFormation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs (311)B quantum dot superlatticesh, J. Appl. Phys., 88 (1), 227-235 (2000).
  66. S. Lan, T. Nishimura, K. Akahane, H. Z. Song, Y. Okada, O. Wada, and M. Kawabe, gCapture, relaxation and recombination in two-dimensional In0.4Ga0.6As/GaAs (311)B quantum dot superlatticesh, Physical Review B 61, 16847-16853 (2000).
  67. Y. Iuchi, M. Kawabe, and Y. Okada, gNano-scale patterning of GaAs using local probe oxidation techniqueh, Trans. Materials Research Society of Japan, 25 (3), 845-847 (2000).
  68. H. Z. Song, S. Lan, K. Akahane, K. Y. Jang, Y. Okada, and M. Kawabe, gIsolated and close-packed In0.4Ga0.6As/GaAs (311)B quantum dotsh, Solid State Commun., 115, 195-199 (2000).
  69. H. Z. Song, S. Lan, K. Akahane, K. Y. Jang, Y. Okada, and M. Kawabe, gEffect of Charge Distribution in Quantum Dot Array on Two-Dimensional Electron Gash, Jpn. J. Appl. Phys., 39 (10), 5746-5750 (2000).
  70. Y. Okamoto, K. Takahashi, H. Nakamura, Y. Okada, and M. Kawabe, gEffects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 39 (4B), L343-L346 (2000).
  71. K. Y. Jang, Y. Okada, and M. Kawabe, gEffect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 39 (7B), 4266-4269 (2000).
  72. Y. Okamoto, K. Takahashi, H. Nakamura, Y. Okada, and M. Kawabe, gThe Effect of Atomic Hydrogen on Indium Incorporation and Ordering in InGaN grown by RF-MBEh, Physical Status Solidi (a), 180, 59-64 (2000).
  73. -1999-

  74. Y. Suzuki, T. Kikuchi, M. Kawabe, and Y. Okada, gAtomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum well solar cellsh, J. Appl. Phys., 86 (10), 5858-5861 (1999).
  75. Y. Okada, Y. Suzuki, T. Kikuchi and M. Kawabe, gUse of Multi-Quantum Wells for Photoabsorption Enhancement in Compound Semiconductor Solar Cellsh, Proc. of 1999 Electronic Materials Conference, Santa Barbara, June 1999.
  76. Y. Okada, Y. Iuchi, M. Kawabe, and J. S. Harris, Jr., gAn AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxidesh, Jpn. J. Appl. Phys., 38 (2B), L160-L162 (1999)
  77. S. Lan, K. Akahane, K. Y. Jang, T. Kawamura, Y. Okada, and M. Kawabe, gThe Procedure to Realize Two-Dimensional Quantum Dot Superlattices: From Incoherently Coupled to Coherently Coupled Quantum Dot Arraysh, , Jpn. J. Appl. Phys., 38 (2B), 1090-1093 (1999).
  78. S. Lan, K. Akahane, K. Y. Jang, T. Kawamura, Y. Okada, M. Kawabe, T. Nishimura, and O. Wada, gTwo-Dimensional In0.4Ga0.6As/GaAs Quantum Dot Superlattices Realized by Self- Organized Epitaxial Growthh, Jpn. J. Appl. Phys., 38 (5A), 2934-2943 (1999).
  79. Y. Okada, Y. Iuchi, M. Kawabe, and J. S. Harris, Jr., gGaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Techniqueh, Institute of Physics Conference Series, 162, 337-342 (1999).
  80. S. Lan, K. Akahane, H. Z. Song, Y. Okada, and M. Kawabe, gOrdering of InxGa1-xAs quantum dots self-organized on GaAs (311)B substratesh, J. Vacuum Sci. Technol., B17, 1105-1108 (1999).
  81. T. Kawamura, K. Akahane, Y. Okada, and M. Kawabe, gGrowth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrateh, Jpn. J. Appl. Phys., 38 (7A), L720-L723 (1999).
  82. K. Y. Jang, Y. Okada, and M. Kawabe, gEffect of hydrogen in AlGaAs grown by atomic H-assisted molecular beam epitaxyh, J. Crystal Growth, 197, 54-58 (1999).
  83. Y. Okamoto, S. Hashiguchi, Y. Okada, and M. Kawabe, gEffects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 38 (3A), L230-L233 (1999).
  84. K. Y. Jang, Y. Okada, and M. Kawabe, gEffects of atomic hydrogen in molecular beam epitaxy of Al(Ga)Ash, J. Crystal Growth, 206, 267-270 (1999).
  85. K. Y. Jang, Y. Okada, and M. Kawabe, gEffects of hydrogen in AlAs growth by atomic hydrogen-assisted molecular beam epitaxyh, MRS Symp. Proc., 570, 285-289 (1999).
  86. -1998-

  87. Y. Okada, Y. Suzuki, M. Kawabe, N. Yui, and H. Kawanami, gPhotovoltaic Properties of GaAs/InGaAs-Based Quantum Well Structures Fabricated by Molecular Beam Epitaxy with Atomic Hydrogenh, Proc. of 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, July 1998.
  88. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo, and J. S. Harris, Jr., gNanoscale oxidation of GaAs-based semiconductors using atomic force microscopeh, J. Appl. Phys., 83 (4), 1844-1847 (1998).
  89. Y. Okada, S. Amano, M. Kawabe, and J. S. Harris, Jr., gBasic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAsh, J. Appl. Phys., 83 (12), 7998-8001 (1998).
  90. Y. Okada, S. Amano, Y. Iuchi, M. Kawabe, and J. S. Harris, Jr., gAn AlGaAs/GaAs Tunneling Diode Integrated With Nanometer-Scale Oxides Patterned by Atomic Force Microscopeh, Electronics Lett., 34 (12), 1262-1263 (1998).
  91. K. Akahane, K. Okino, Y. Okada, and M. Kawabe, gSelf-organized quantum dots grown on GaAs (311)B by atomic hydrogen-assisted molecular beam epitaxyh, Solid State Electronics, 42 (7-8), 1613-1621 (1998).
  92. Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo, and J. S. Harris, Jr., gAtomic Force Microscope Nanoscale Lithography For Single-Electron Device Applicationh, Institute of Physics Conference Series, 156, 577-580 (1998).
  93. Y. Okada, S. Amano, and M. Kawabe, gOn the Mechanism of Scanning Probe Microscope Tip-Induced Nano-Oxidation Process of GaAsh, J. Surface Analysis, 3 (2), 296-298 (1998).
  94. K. Akahane, T. Kawamura, S. Lan, Y. Okada, and M. Kawabe, gControl of Size and Density of Self-organized Quantum Dots Grown on GaAs (311)B by Atomic H-assisted Molecular Beam Epitaxyh, J. Surface Analysis, 3 (2), 255-257 (1998).
  95. K. Akahane, T. Kawamura, K. Okino, H. Koyama, S. Lan, Y. Okada, and M. Kawabe, gHighly packed InGaAs quantum dots on GaAs (311)Bh, Appl. Phys. Lett., 73 (23), 3411-3413 (1998). K. Y. Jang, Y. Okada, and M. Kawabeh, Band-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxyh, Solid State Electronics, 42 (7-8), 1565-1568 (1998).
  96. Y. Okamoto, S. Hashiguchi, Y. Okada, and M. Kawabe, gGrowth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 37 (10A), L1109-L1112 (1998).
  97. -1997-

  98. Y. Suzuki, M. Shimoda, Y. Okada, and M. Kawabe, gFormation of Quantum Dot Structures by Atomic Hydrogen-Assisted Selective Area Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 36 (11B), L1538-L1540 (1997).
  99. Y. Okada, J. S. Harris, Jr., A. Sutoh, and M. Kawabe, gGrowth of abrupt GaAs/Ge interfaces by atomic hydrogen-assisted molecular beam epitaxyh, J. Crystal Growth, 175/176, 1039-1044 (1997).
  100. -1996

  101. B. N. Shimbo, J. S. Harris, Jr., Y. Okada, S. Komarov, and B. J. Vartanian, gAtomic Force Microscope Chemically Induced Direct Processing of GaAs and NiAlh, MRS Symp. Proc. on Compound Semiconductor Electronics and Photonics, 299-301 (1996).
  102. Y. Okada, A. Sutoh, M. Kawabe, and J. S. Harris, gGaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxyh, MRS Symp. Proc. on Evolution of Epitaxial Structure and Morphology, 399, 203-206 (1996).
  103. Y. J. Chun, S. Nakajima, Y. Okada, and M. Kawabe, gUniform Quantum Dots by Self-Organizing Process in Atomic Hydrogen-Assisted MBEh, MRS Symp. Proc. on Evolution of Epitaxial Structure and Morphology, 399, 289-294 (1996).
  104. Y. Okada and J. S. Harris, Jr., gBasic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactanth, J. Vacuum Sci. Technol., B14, 1725-1728 (1996).
  105. Y. Okada, J. S. Harris, Jr., and W. Gotz, gDeep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxyh, J. Appl. Phys., 80 (8), 4770-4772 (1996).
  106. Y. J. Chun, Y. Okada, and M. Kawabe, gSurfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InPh, Jpn. J. Appl. Phys., 35 (12B), L1689-L1691 (1996).
  107. Y. J. Chun, S. Nakajima, Y. Okada, and M. Kawabe, gThe Role of Atomic Hydrogen for Formation of Quantum Dots by Self-Organizing Process in Molecular Beam Epitaxyh, Physica B, 227, 299 (1996).
  108. -1995-

  109. M. Kaneko, T. Sugaya, Y. Okada, and M. Kawabe, gA Molecular Beam Epitaxy Approach to Quantum Dot Arraysh, Jpn. J. Appl. Phys., 34 (8B), 4390-4391 (1995).
  110. Y. Okada, T. Sugaya, S. Ohta, T. Fujita, and M. Kawabe, gAtomic Hydrogen-Assisted GaAs Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 34 (1), 238-244 (1995).
  111. S. H. Cho, H. Sakamoto, K. Akimoto, Y. Okada, and M. Kawabe, gEpitaxial Growth of GaN on Sapphire (0001) by Electron Cyclotron Resonance Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 34 (2B), L236-L239 (1995).
  112. Y. Okada, T. Fujita, and M. Kawabe, gElementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 34 (6B), L768-L771 (1995).
  113. Y. Okada, T. Fujita, and M. Kawabe, gGrowth modes in atomic hydrogen-assisted molecular beam epitaxy of GaAsh, Appl. Phys. Lett., 67 (5), 676-678 (1995). Y. J. Chun, Y. Okada, and M. Kawabe, gEffect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxyh, J. Crystal Growth, 150 (1-4), 497-502 (1995).
  114. S. Ohta, Y. Okada, and M. Kawabeh, Effect of atomic hydrogen irradiation in low-temperature GaAs/Si heteroepitaxyh, J. Crystal Growth, 150 (1-4), 661-664 (1995).
  115. T. Ishibashi, H. Soutome, Y. Okada, and M. Kawabe, gBiSrCaCuO thin films grown by growth interruption techniqueh, J. Crystal Growth, 150 (1-4), 1094-1097 (1995).
  116. T. Ishibashi, H. Soutome, Y. Okada, and M. Kawabe, gSurface Diffusion in Molecular Beam Epitaxy of BiSrCaCuOh, IEEE Trans. Appl. Superconductivity, 5 (2), 1805-1809 (1995).
  117. A. Sutoh, Y. Okada, S. Ohta, and M. Kawabe, gCracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 34 (10B), L1379-L1382 (1995).
  118. -1994-

  119. Y. Okada, A. Kawabata, M. Kawabe, N. Yui, and H. Kawanami, gGrowth of GaAs and AlGaAs on Si Substrates by Atomic Hydrogen-Assisted MBE (H-MBE) for Solar Cell Applicationsh, Proc. of 1st World Conference on Photovoltaic Solar Energy Conversion, Hawaii, Dec. 1994.
  120. Y. Okada, S. Ohta, T. Fujita, and M. Kawabe, gGaAs/AlGaAs Quantum Wells Grown by Low-Temperature MBE with Atomic Hydrogen Irradiationh, Jpn. J. Appl. Phys., 33 (1B), 759-762 (1994).
  121. Y. Okada, S. Ohta, A. Kawabata, H. Shimomura, and M. Kawabe, gPhotoluminescence Study of GaAs Films on Si (100) Grown by Atomic Hydrogen- Assisted Molecular Beam Epitaxyh, J. Electronic Materials, 23 (3), 331-335 (1994).
  122. -1993-

  123. Y. Okada, S. Ohta, H. Shimomura, A. Kawabata, and M. Kawabe, gHigh-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applicationsh, Jpn. J. Appl. Phys., 32 (10B), L1556-L1558 (1993).
  124. Y. Okada, S. Ohta, H. Shimomura, H. Matsumoto, A. Kawabata, and M. Kawabe, gAtomic Hydrogen-Assisted GaAs/Si Heteroepitaxy for Solar Cell Applicationsh, Proc. of 7th International Photovoltaic Science and Engineering Conference, Nagoya, Nov. 1993.
  125. T. Sugaya, Y. Okada, and M. Kawabe, gSelective Area Growth of GaAs by Molecular Beam Epitaxyh, Institute of Physics Conference Series, 129, 55-60 (1993).
  126. T. Sugaya, M. Kaneko, Y. Okada, and M. Kawabe, gFabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 32 (12B), L1834-L1836 (1993).
  127. H. Shimomura, Y. Okada, H. Matsumoto, M. Kawabe, Y. Kitami, and Y. Bando, gReduction Mechanism of Dislocation Density in GaAs Films on Si Substratesh, Jpn. J. Appl. Phys., 32 (1B), 632-636 (1993).
  128. Y. J. Chun, T. Sugaya, Y. Okada, and M. Kawabe, gLow Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogenh, Jpn. J. Appl. Phys., 32 (2B), L287-L289 (1993).
  129. Y. J. Chun, Y. Okada, and M. Kawabe, gEnhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiationh, Jpn. J. Appl. Phys., 32 (8A), L1085-L1087 (1993).
  130. Y. Okada, H. Shimomura, and M. Kawabe, gLow dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integrationh, J. Appl. Phys., 73 (11), 7376-7384 (1993).
  131. Y. Okada, H. Shimomura, H. Matsumoto, S. Ohta, A. Kawabata, and M. Kawabe, gElectrical Properties of Epitaxial GaAs Grown by Low-Temperature MBE with Atomic Hydrogen Irradiationh, Institute of Physics Conference Series, 129, 531-536 (1993).
  132. -1992-

  133. T. Sugaya, Y. Okada, and M. Kawabe, gSelective Growth of GaAs by Molecular Beam Epitaxyh, Jpn. J. Appl. Phys., 31 (6A), L713-L716 (1992).
  134. H. Shimomura, Y. Okada, and M. Kawabe, gLow Dislocation Density GaAs on Vicinal Si (100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiationh, Jpn. J. Appl. Phys., 31 (5B), L628-L631 (1992).
  135. Y. Okada, H. Shimomura, and M. Kawabe, gAtomic Image Observation of Hydrogen-Saturated Si (100) Prepared by Atomic Hydrogen Irradiationh, Jpn. J. Appl. Phys., 31 (8A), L1121-L1123 (1992).
  136. T. Sugaya, Y. Okada, and M. Kawabe, gInvestigation of Growth Mechanism of GaAs Molecular Beam Epitaxy with Atomic Hydrogen Irradiationh, Appl. Surface Sci., 60/61, 251-255 (1992).
  137. -1991-

  138. Y. Okada and K. Tada, gApplication of bipolar transistor structures to optical waveguide modulators and switchesh, J. Appl. Phys., 69 (1), 73-78 (1991).
  139. Y. Okada and K. Tada, gThe Effect of Temperature on the Performance of GaAs/AlGaAs Carrier-Injected Optical Waveguide Modulators and Switchesh, Optics Lett., 16 (10), 735-737 (1991).
  140. K. Tada, D. K. Gautum, Y. Okada, Y. Shimogaki, and Y. Nakano, gDouble Heterostructure Bipolar Transistor as a Multifunctional Device for Optoelectronic Integrated Circuits into GaAsh, Physics of Semiconductor Devices; Proc. of the 6th International Workshop on Physics of Semiconductor Devices, New Delhi (India), Dec. 1991, pp.4-27
  141. Y. Okada, H. Shimomura, T. Sugaya, and M. Kawabe, gLow Temperature Substrate Cleaning of Vicinal Si (100) for Growth of GaAs on Sih, Jpn. J. Appl. Phys., 30 (12B), 3774-3776 (1991).
  142. -1990-

  143. Y. Okada and K. Tada, gGaAs/AlGaAs Reflection-Type Optical Switch Using Bipolar Transistor Waveguide Structureh, Photonic Switching II (Springer-Verlag), 50-52 (1990).
  144. -1989-

  145. Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, and K. Tada, gThe Effect of Band-Tails on the Design of GaAs/AlGaAs Bipolar Transistor Carrier- Injected Optical Modulator/Switchh, IEEE J. Quantum Electronics, 25 (4), 713-719 (1989).
  146. Y. Okada, T. Ishikawa, and K. Tada, gOptical intensity modulator for integrated optics by use of heterojunction bipolar transistor waveguide structureh, Appl. Phys. Lett., 55 (25), 2591-2593 (1989).
  147. -1986-

  148. K. Tada and Y. Okada, gBipolar Transistor Carrier-Injected Optical Modulator/Switch; Proposal and Analysish, IEEE Electron Device Lett., EDL-7 (11), 605-606 (1986).